Infineon Technologies AG uses the advanced neutral-point-clamped (ANPC) topology for its hybrid silicon-carbide (SiC) and IGBT power module EasyPACK 2B in the 1200-V family. Optimizing for sweet-spot ...
Manufacturers of silicon carbide (SiC) and gallium nitride (GaN) power ICs leveraged the APEC 2024 conference to highlight their latest developments in wide-bandgap semiconductors. These devices offer ...
Delta's Three-Phase PV Inverter benefits from the efficiency offered by SiC technology The NXH40B120MNQ family of full SiC power modules integrate a 1200 V, 40mΩ SiC MOSFET and 1200 V, 40 A SiC boost ...
Navitas is now sampling 2.3-kV and 3.3-kV SiC MOSFETs in power-module, discrete, and known-good-die (KGD) formats. Leveraging fourth-generation GeneSiC Trench-Assisted Planar (TAP) technology, these ...
PITTSBURGH--(BUSINESS WIRE)--Arieca, a leader in liquid-metal-based Thermal Interface Materials (TIM), entered into a joint research agreement with ROHM Co., Ltd., a leading provider of power ...
After years of R&D in the lab, compound semiconductor materials like silicon carbide (SiC) and gallium nitride (GaN) used for ICs are taking a bigger role in handling electrical power. These ...
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