KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...
Wide bandgap (WBG) semiconductors are finding applications in all types of power conversion including in electric vehicles. With their promise of higher efficiency and faster switching speeds yielding ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
In 2025, Mitsubishi Electric plans to begin mass production of power modules equipped with SiC MOSFETs. Save my User ID and Password Some subscribers prefer to save their log-in information so they do ...
CISSOID, a specialist in high temperature semiconductors, has announced a new 3-Phase SiC MOSFET Intelligent Power Module (IPM) platform for E-mobility. The IPM technology offers an all-in-one ...
MOSFETs using silicon carbide and gallium nitride technology are emerging to fill the power-controller need in electric and hybrid electric vehicles, and, while they are not yet in volume production, ...
Skyworks is introducing an isolated gate driver reference design that operates with Wolfspeed’s SiC FET power modules. With the growing adoption of SiC for power conversion and inverter applications — ...
UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has launched an upgrade to its FET-Jet Calculator. This new version (v2) has been designed to significantly streamline the SiC ...
SiC (silicon carbide) has established itself as an important material in the semiconductor market because it has many outstanding properties. In comparison with silicon, SiC offers a higher electrical ...
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