High-voltage silicon-carbide (SiC) MOSFETs and diodes combine the advantages of fast switching speeds and very low switching losses. This allows power converters designed with them to operate at ...

Download this article in PDF format. Switching losses are inevitable in any power device. But these losses can be minimized through optimization and rigorous measurement of design parameters related ...

Metal Oxide Silicon Field Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), Bipolar Junction Transistors (BJTs), diodes, and application specific multi-transistor packaged ...

The first measurement operation concerns the forward voltage of the SiC diode. As shown in Figure 3, this is the simple electric circuit of the test, its 3D representation, and the excerpt of the ...

The German PV testing equipment provider said its new Sinus-3000 Pro line is an ‘all-in-one system’ that can perform power measurements, bypass diode testing, insulation testing, visual inspection, ...

Many years ago I was using 2N918 transistors in an RF application. That transistor comes in a size TO-72 package, which has four leads, one each for the collector, the emitter, the base and the ...

High-power broad-area diode lasers have emerged as a pivotal technology in modern photonics, combining high energy output with the benefits of semiconductor manufacturing. These devices employ wide ...