Modelithics expands RF and microwave simulation offering with the addition of new GaN HEMT models from Guerrilla RF.

Modelithics, a provider of RF and microwave simulation models, has added new high-power Guerrilla RF GaN HEMT models to the ...

Modelithics and Guerrilla RF Collaborate to Deliver Nonlinear GaN-on-SiC HEMT Models from 15 W to 150 W P SAT for ...

New York, United States , June 01, 2023 (GLOBE NEWSWIRE) -- The Global High Electron Mobility Transistor (HEMT) Market Size is to grow from USD 7.51 billion in 2022 to USD 16.82 billion by 2032, at a ...

A collaboration between A*STAR, Nanyang Technological University and Soitec is claiming to have broken new ground in the ...

Wide bandgap semiconductor materials are highly useful in power electronics due to their ability to work at high temperatures, power, and frequency. Gallium nitride (GaN) is a wide bandgap ...

Innoscience Technology, which was founded to pursue high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power ICs, has come up with a 40V bi-directional GaN-on-Si enhancement mode ...

The Zeta-Series optical profilers provide accurate measurement and automated analysis of high aspect ratio structures such as HEMT vias using non-destructive and high throughput metrology techniques.

A technical paper titled “A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications” was published by researchers at Wright-Patterson AFB, Teledyne Scientific, HRL Laboratories, BAE ...

ST has begun volume production of e-mode PowerGaN HEMT devices that simplify the design of high-efficiency power-conversion systems. The STPOWER GaN transistors raise performance in applications such ...