SAN JOSE, CA--(Marketwire - Oct 30, 2012) - Cadence Design Systems, Inc. (NASDAQ: CDNS), a leader in global electronic design innovation, announced today the tapeout of a 14-nanometer test-chip ...
Survey shows nearly a third of all designs are targeting the most advanced process nodes; 10nm tapeouts will happen right on the heels of 14/16nm. My previous blog, Power Reduction Techniques, covered ...
HSINCHU, Taiwan and MOUNTAIN VIEW, Calif. -- June 26, 2013 -- Synopsys, Inc. (Nasdaq:SNPS), a global leader providing software, IP and services used to accelerate innovation in chips and electronic ...
(Nanowerk News) Bulk FinFETs are key devices for advanced technology node applications such as analog circuits and SRAMs because of a very good short channel effect control and transistor compactness.
One of the biggest advantages of moving to the a leading edge process node is ultra-low voltage operation, where devices can achieve better performance using less power. But the latest generation ...
The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...
14-nanometer SOI FinFET Process Leverages Strong Ecosystem Partnerships Between EDA, Foundry and IP Providers to Deliver Significant Power Savings Potential SAN JOSE, Calif., 30 Oct 2012 - Cadence ...
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